bym12-50 thru bym12-4 00, egl41a thru egl41g document number 88581 10-aug-05 vishay general semiconductor www.vishay.com 1 p a t e n t e d * ? do-213ab (gl41) *glass-plastic encapsulation is covered by patent no. 3,996,602, brazed-lead assembly to patent no. 3 , 930 , 306 surface mount glass passivat ed ultrafast rectifier major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 400 v i fsm 30 a t rr 50 ns v f 1.0 v, 1.25 v t j max. 175 c features cavity-free glass-passivated junction ideal for automated placement ultrafast reverse recovery time low switching losse s, high efficiency high forward surge capability meets environmental standard mil-s-19500 meets msl level 1, per j-std-020c solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer, automotive and telecommunication mechanical data case: do-213ab, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating maximum ratings t a = 25 c unless otherwise specified parameter symbol bym12-50 bym12-100 bym12-150 bym12-200 bym12-300 bym12-400 unit fast efficient device: 1st band is green egl41a egl41b egl41c egl41d egl41f egl41g polarity color bands (2nd band) gray red pink orange brown yellow maximum repetitive peak reverse voltage v rrm 50 100 150 200 300 400 v maximum rms voltage v rms 35 70 105 140 210 280 v maximum dc blocking voltage v dc 50 100 150 200 300 400 v maximum average forward rectified current at t t = 75 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j ,t stg - 65 to + 175 c
www.vishay.com 2 document number 88581 10-aug-05 bym12-50 thru bym12-400 , egl41a thru egl41g vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) thermal resistance from junction to ambient, 0. 24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal (2) thermal resistance from juncti on to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol bym12-50 bym12-100 bym12-150 bym12-200 bym12-300 bym12-400 unit egl41a egl41b egl41c egl41d egl41f egl41g maximum instantaneous forward voltage (1) at 1.0 a v f 1.0 1.25 v maximum dc reverse current at rated dc blocking voltage (1) t a = 25 c t a = 125 c i r 5.0 50 a max. reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns typical junction capacitance at 4.0 v, 1 mhz c j 20 14 pf parameter symbol bym12-50 bym12-100 bym12-150 bym12-200 bym12-300 bym12-400 unit egl41a egl41b egl41c egl41d egl41f egl41g maximum thermal resistance (1, 2) r ja r jt 60 30 c/w figure 1. maximum forward current derating curve 0 1.0 0 25 50 75 100 125 150 175 average forward rectified current (a) lead temperature ( c) 0.5 resistive or inductive load figure 2. maximum non-repetitive peak forward surge current 0 5.0 10 15 20 25 30 1 100 10 peak forward surge current (a) number of cycles at 60 h z t j =t j max. 8.3ms single half sine-wave
bym12-50 thru bym12-4 00, egl41a thru egl41g document number 88581 10-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward voltage (v) 0.01 0.1 10 1 50 instantaneous forward current (a) 1.8 t j =25c t j = 150 c pulse width = 300 s 1% duty cycle egl41a - egl41d egl41f - egl41g 020 60 40 100 80 instantaneous reverse leakage current ( a) percent of rated peak reverse voltage (%) t j =25c t j = 100 c t j = 150 c 0.01 0.1 10 1 100 1,000 figure 5. typical junction capacitance figure 6. typical trans ient thermal impedance reverse voltage (v) junction capacitance (pf) 0.1 1 10 100 20 10 30 40 50 60 70 0 t j =25c f = 1.0 mh z vsig = 50mvp-p egl41a - egl41d egl41f - egl41g pulse duration, sec. (t) transient thermal impedance (c/w) 0.01 0.1 1 10 100 100 10 1 0.1 solderable ends 1st band 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185(4.7) d1= 0.105 0.095 (2.67) (2.41) d2=d1 +0 - 0.008 (0.20) 1st band denotes type and positive end (cathode) d2 0.022 (0.56) 0.018 (0.46) do-213ab (gl41)
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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